Keith Jackson


place: Columbus, Ohio

Morehouse and Georgia Tech

Ph.D. Stanford University

Dr. Jackson was born in Columbus Ohio. He attended Morehouse College in Atlanta Georgia. At Morehouse he joined the Dual Degree program which had been established with the Georgia institute of Technology. After successfully graduating from both universities, Dr. Jackson was admitted to the Ph. D. program in the physics department of Stanford University. While at Stanford his thesis research was performed under the direction of Dr. Richard N. Zare. His work was primarily in the area of molecular dynamics and photo-dissociation. This work required the use of rare gas excimer lasers and synchrotron radiation as excitation sources in the vacuum ultraviolet.

After his graduate work was completed, Dr. Jackson joined the staff of Hewlett Packard Laboratories. At Hewlett Packard as a member of the Gate Dielectric group, he has been involved with the development of Silicon Nitride ( Si3 N4 ) as a potential gate insulator in NMOS, and CMOS technologies. His job was to develop the necessary processing techniques required to fabricate thin nitride films on silicon substrates. This included the use of thermal, plasma, and laser based chemical vapor deposition, to grow silicon nitride. The characterization of these films required the use of Auger, SIMS, and IR spectroscopy.
Dr. Jackson joined the faculty of Howard University September 2, 1983. As a member of the Solid State Electronics group he is involved in both advanced materials development, and characterization. This includes the growth and analysis of single crystal silicon carbide, GaAs/AlGaAs layers,and high purity VPE GaAs using Auger electron spectroscopy.

On July 27, 1988 Dr. Jackson became a Member of the Technical Staff at the Rocketdyne division of Rockwell International. At Rocketdyne he established a facility for the growth and characterization of polycrystalline diamond thin films. Currently Dr. Jackson is Associate Director of the Center for X-ray Optics at the Lawrence Berkeley Laboratory. He has held that position since March 1, 1992. His research interests include Extreme Ultraviolet Lithography, synchrotron radiation research , and the fabrication of high aspect ratio microstructures using deep etch X-ray lithography.

Dr. Jackson is currently president elect of the National Society of Black Physicists (NSBP).

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