born:

place:

Pre-doctorate education: BS in Mathematics and Physics, 1991, Tougaloo College; MS in Physics, 1995, Stanford University

Doctorate: Ph.D. in Physics, Stanford University 1999

Area:

Current Employment: Assistant Professor of Physics. University of Alabama in Huntsvill

email: HMOluseyi@lbl.gov

Hakeem M. Oluseyi

(née J. E. Plummer)

 

BRIEF BIO

Dr. Hakeem M. Oluseyi is an astrophysicist, educator, and inventor. He received his B.S. degrees in Math and in Physics from Tougaloo College and M.S. and Ph.D. degrees in Physics from Stanford University. His post-doctoral work was performed at Applied Materials, Inc. and Lawrence Berkeley National Laboratory. He is currently an Assistant Professor of Physics at the University of Alabama in Huntsville and an Astrophysicist at NASA Marshall Space Flight Center.

Dr. Oluseyi's research has focused on the development of instrumentation for space-based astronomical observation including optics, detectors, and electronics, and on the analysis of terrestrial and astronomical plasmas including semiconductor manufacturing plasmas, solar/stellar atmospheres and supernovae. He is the author or co-author of over 40 scientific publications, holds eight patents, and has received several fellowships, honors and awards.

As an educator Dr. Oluseyi has taught a diversity of students from Stanford University, Foothill College, Kaplan Test Prep Center, and the University of Alabama. He has supervised the research activities of eleven students, six of whom were women and seven of whom were from underrepresented minority groups. Dr. Oluseyi has also traveled regularly to South and East Africa as a member of Cosmos Education to teach K-12 students as well as to train young educators. At home, Dr. Oluseyi is equally committed to educational and public outreach. He is a sought after scientific and motivational speaker and regularly makes appearances around the country to professional, student, and lay audiences.

Currently, Dr. Oluseyi is a member of the SuperNova/Acceleration Probe (SNAP) science team. SNAP is a proposed 2-meter space telescope designed to map out the expansion history of the universe utilizing Type Ia supernovae as standard candles, and elucidate the nature of the dark energy that accelerates the universe's expansion. Dr. Oluseyi is currently developing visible and near infrared CCD detectors that are designed for deployment on SNAP. His recent research has focused on taking the detector program from a research mode to the delivery of precision robust reliable devices. This work has recently resulted in the deployment of the novel CCD technology as a detector in the SuperNova Intergral Field Spectrograph (SNIFS), a part of the Nearby Supernova Factory. Additionally, Dr. Oluseyi is also studying the atmospheres of the Sun and sun-like stars.

 

PROFESSIONAL APPOINTMENTS
01/04 ­ present Assistant Professor of Physics, University of Alabama, Huntsville, AL
Astrophysicist, NASA Marshall Space Flight Center
11/01 ­ 12/03 Astrophysics Postdoctoral Fellow, Lawrence Berkeley National Laboratory, Berkeley, CA
07/99 ­ 09/01 Senior Process Engineer, Applied Materials, Inc., Sunnyvale, CA
09/98 ­ 01/02 Assistant Professor of Astronomy, Foothill College, Los Altos Hills, CA
09/93 ­ 07/99 Graduate Research and Teaching Assistant, Stanford University, Stanford, CA

Dr. Hakeem M. Oluseyi has won many awards. A list can be obtained from him.

 

Research Interests

Current Technology Development: High resistivity p-Channel CCDs, scientific payload development
Current Areas of Investigation: cosmology, solar/stellar atmospheres

Past Technology Development: EUV/soft x-ray multilayer mirrors, thin foil filters, delta-doped CCDs, 300mm plasma etcher
Past Areas of Investigation: Solar/stellar atmospheres, plasma etching, in-situ spectroscopic process diagnostics and control for plasma-based semiconductor manufacturing

ASTROPHYSICS PUBLICATIONS
1. "On the Inability of Coronal Funnels to Account for the Solar Upper Transition Region," Oluseyi, H. M. and Carpio, M.,
ApJ, to be submitted, 2004.
2. "The Structure of the Solar Transition Region," Oluseyi, H. M. and Sheung, J., ApJ, to be submitted, 2004.
3. "Weak Lensing from Space I: Instrumentation and Survey Strategy," with Rhodes et al., Astropart. Phys., 20, 2004.
4. "Wide-Field Surveys from the SNAP Mission," with A. Kim et al., Proc. SPIE, 4836, 2002.
5. "Arthur B. C. Walker, II: Scholar, Warrior, Citizen," H. M. Oluseyi, NSBP Newsletter and
(http://www.math.buffalo.edu/mad/physics/walker_arthurbc.html#Scholar, Warrior, Citizen), 2001.
6. "Development of a Global Model of the Solar Atmosphere with an Emphasis on the Solar Transition Region,"
Oluseyi, H. M., Ph.D. Thesis, Stanford University, 2000.
7. "Observation and Modeling of the Solar Transition Region: II. Identification of New Classes of Quasi-Static Loop
Model Solutions," Oluseyi, H. M. et al., ApJ, 527, 992, 1999.

8. "Observation and Modeling of the Solar Transition Region: I. Multi-Spectral Solar Telescope Array Observations,"
Oluseyi, H. M.; Walker, II, A. B. C.; Porter, J.; Hoover, R. B. and Barbee T. W., ApJ, 524, 1105, 1999.
9. "Chromospheric and Coronal Structure of Polar Plumes: I. Magnetic Structure and Radiative Energy Balance,"
Allen, M. J.; Oluseyi, H. M.; Walker, II, A. B. C.; Hoover, R. B. and Barbee, T. W., Sol. Phys., 174, 367, 1997.

10. "The Structure of the Solar Chromosphere: The Interpretation of Multilayer Images," Walker, II, A. B. C.; Plummer ,
J. E. and Martínez-Galarce, D. S., Proc. SPIE, 2805, 345, 1996.

ASTROPHYSICS INSTRUMENTATION PUBLICATIONS

  1. "Characterization and Deployment of Large Format Back-Illuminated Fully Depleted p-Channel CCDs for Precision Astronomy," Oluseyi, H.M., et al., Proc. SPIE, to be submitted, 2004.
  2. "SNAP Telescope: an update," with Lampton, M., et al., Proc. SPIE 5166, 2004.
  3. "LBNL 4-Side Buttable CCD Packaging Development," Oluseyi, H. M., et al., Proc. SPIE, 5301, 2004.
  4. "Fully Depleted Back-Illuminated p-Channel CCD Development," with Bebek, C. J., et al., Proc. SPIE, 5167, 2004.
  5. "SNAP Satellite Focal Plane Development," with Bebek, C. J., et al., Proc. SPIE, 5164, 2003.
  6. "The SNAP Focal Plane," with Lampton, M., et al., Proc. SPIE, 4854, 2003.
  7. "SNAP NIR Detectors," with G. Tarlé et al., Proc. SPIE, 4850, 2003.
  8. "SNAP: An Integral Field Spectrograph for Supernova Identification," with Ealet, A. et al., Proc. SPIE, 4850, 2003.
  9. 9. "SNAP CCD Development Progress," Oluseyi, H. M., et al., Bull. Amer. Astro. Soc., 34, no. 4, 2002.
  10. "The SNAP Telescope," with Lampton et al., Proc. SPIE, 4849, 2002.
  11. "Overview of the SuperNova/Acceleration Probe (SNAP)," with G. Aldering et al., Proc. SPIE, 4835, 2002.
  12. "Ultrastable and Uniform EUV and UV Detectors," Nikzad, S.; Jones, T. J.; Elliott, S. T.; Cunningham, T. J.; Deelman, P. W.; Walker, A. B. C. and Oluseyi, H. M., Proc. SPIE, 4139, 250, 2000.
  13. "Multi-Spectral Solar Telescope Array VIII: the second flight," Walker, A.B.C., et al., Proc. SPIE, 2515, 182, 1995.
  14. "The Design and Performance of Thin Foil Filters for the Multi-Spectral Solar Telescope Array II," Plummer1, J. E.; DeForest, C. E., et al., Proc. SPIE, 2515, 565, 1995.
  15. "Calibration of Multilayer Mirrors for the Multi-Spectral Solar Telescope Array," Kankelborg, C. C., Plummer1, J. E., et al., Proc. SPIE, 2515, 463, 1995.
  16. "Astronomical Observations with Normal Incidence Multilayer Optics IV: Selection of Spectral Lines," Walker, Jr., A. B. C.; Plummer1, J. E.; Hoover, R. B. and Barbee T. W., Proc. SPIE, 2279, 343, 1994.
  17. "Astronomical Observations with Normal Incidence Multilayer Optics III: selection of multilayer bandpasses," Walker, Jr.; A. B. C.; Jackson, L.; Plummer1, J. E. and Hoover R. B., Proc. SPIE, 2011, 450, 1993.
  18. "Performance of Multilayer Coated Mirrors for the Multi-Spectral Solar Telescope Array," with Allen, M. J., et al., Proc. SPIE, 2011, 381, 1993.

NANOTECHNOLOGY PATENTS

  1. 1. "A Method and Apparatus Employing Optical Emission Spectroscopy to Detect a Fault in Process Conditions of a Semiconductor System," H. M. Oluseyi & M. Sarfaty, November 21, 2000, U.S. Patent 6,603,538, 21 claims, 2003.
  2. "Monitoring of Film Characteristics during Plasma-Based Semiconductor Processing Using Optical Emission
    Spectroscopy," H. M. Oluseyi & M. Sarfaty, November 7, 2000, U.S. Patent 6,633,391, 20 claims, 2003.
  3. "Method of Etching Tungsten or Tungsten Nitride in Semiconductor Structures," P. Nallan & H. M. Oluseyi, May 7, 2002, U.S. Patent 6,579,806, 18 claims, 2003.
  4. "Method of Etching Tungsten or Tungsten Nitride Electrode Gates in Semiconductor Structures ­ CIP," P. Nallan & H. M. Oluseyi, January 5, 2001, U.S. Patent 6,440,870, 61 claims, 2002.
  5. "Method of Etching Tungsten or Tungsten Nitride Electrode Gates in Semiconductor Structures," P. Nallan & H. M. Oluseyi, July 12, 2000, U.S. Patent 6,423,644, 44 claims, 2002; European Application 01952923.9-2203.
  6. "System, Method and Medium for Modeling, Monitoring and/or Controlling Plasma Based Semiconductor Manufacturing Processes" H. M. Oluseyi, March 20, 2002, U.S. Application #10/101,215, 28 claims.
  7. "Method of Increasing Selectivity to Mask When Etching Tungsten or Tungsten Nitride" (Inventors: H.M. Oluseyi & P. Nallan) Applied Materials, Inc. 2002, U.S. Application #10/177,890.
  8. "A High Selectivity and Residue Free Process for Metal on Thin Dielectric Gate Etch Application" M. Shen, Y. Du, N. Gani, O. Yauw & H.M. Oluseyi, October 23, 2003, U.S. Application #10/279,320, 24 claims.

NANOTECHNOLOGY PUBLICATIONS

  1. "Investigation of Etching poly-Si on a High-k, ZrO2 Dielectric ­ for International Sematech," Oluseyi, H. M., Nallan, P., Shen, M., Sematech Project ETCA010, Applied Materials, Inc., April 2001.
  2. "Development of a Process for Etching 0.15 ­ 0.25 mm W/WN/Poly and W/WN Gates on 2.5 nm SiO2 or Si3N4," Oluseyi, H. M, Nallan, P., Shen, M., Silicon Etch Report DPS70097A/B, Applied Materials, Inc., April 2001.
  3. "Development of an Etch Process for a 0.15 mm WSix/poly Gate," Oluseyi, H. M., Nallan, P., Chinn, J., Silicon Etch Applications Laboratory Report DPS70046, Applied Materials, Inc., November 2000.
  4. "Development of a Process for Etching a 0.20 mm W/WN Gate on 2.0 nm SiON," Oluseyi, H. M., Nallan, P., Chinn, J., Silicon Etch Applications Laboratory Report DPS99201, Applied Materials, Inc., November 2000.
  5. "Development of a Highly Selective Process for Etching 0.12 mm W/WN Gates on 4.5 nm Ta2O5," Oluseyi, H. M., Nallan, P., Chinn, J., Silicon Etch Applications Laboratory Report DPS70055, Applied Materials, Inc., August 2000.
  6. "A Process for Etching a 0.15 mm WSix/poly Gate with Excellent Control," Oluseyi, H. M., Nallan, P., Chinn, J., Silicon Etch Applications Laboratory Report DPS70112, Applied Materials, Inc., June 2000.
  7. "Process Development for New Gate Conductors and High-k Dielectrics ­ for International Sematech," Oluseyi, H. M., Nallan, P., Chinn, J., Silicon Etch Laboratory Report DPS2A016A/B, Applied Materials, Inc., May 2000.
  8. "In-Situ Diagnostics of PECVD Processes Using EyeD System," Oluseyi, H.M., Sarfaty, M., Swarts, D., Acton, D., Agarwal, A., Lymberopolous, D., Applied Materials, Inc., April 2000.
  9. "Development of a Process for Etching Ti/poly Gate Stack," Oluseyi, H. M., Nallan, P., Chinn, J., Silicon Etch Applications Laboratory Report DPS2B062, Applied Materials, Inc., March 2000.
  10. "Process Development for 0.18 mm TiSix Gate Etching," Oluseyi, H. M., Nallan, P., Chinn, J., Silicon Etch Applications Laboratory Report DPS2A032, Applied Materials, Inc., March 2000.
  11. "Concept and Feasibility of the EyeD Spectrometer System," Oluseyi, H.M., Sarfaty, M., Agarwal, A., Applied Materials, Inc., December 1999.
  12. "Design of a CMP Wafer Cassette Tank DI Water Fill and Overflow Status Sensor System," Oluseyi, H.M., Smith, S., Trieu, A., Chemical Mechanical Polishing Division, Applied Materials, Inc., November 1999.
  13. "Reconfiguration of CMP Operator Interface Options Selection Logic and Organization," Oluseyi, H.M., Smith, S., Joyal, J., Chemical Mechanical Polishing Division, Applied Materials, Inc., November 1999.

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